由於具有大能隙的性質，含氮的化合物半導體已經變成在UV 以及可見光應用範圍的光學元件的重要材料之一。因此，在半導體的基板上成長高品質的含氮磊晶層是非常重要的。在氣態源分子束磊晶系統中，我們可以藉由氣體流量閥的控制，精確而快速地改變氮和磷的氣體流量。然而，由於氮和磷的嵌入行為並不清楚，因此瞭解它們在氣態流量比例和固態組成間的關係是非重要而必需的。以Samuelson 的成長模型為基礎，藉由數學的曲線擬合方式對Bi 和Tu 兩人的實驗結果作分析，結果顯示氮在磷化銦的材料中的固態組成還是遠遠低於它在氣態中的組成。因此，在氣態源分子束磊晶系統的正常成長條件下，要在[001]矽基板上成長高氮含量的磷氮化銦磊晶層是不容易的。

Because of their wide band gap property, nitride compound semiconductors have become one of the most important materials for the optical device applications in the region from UV to visible. In gas source molecular beam epitaxy (MBE) system, a precise control and quick change for the group V fluxes can be easily achieved by tuning the gas flow rate controller. However, because of the unknown incorporation behavior of nitrogen and phosphorus, it is very important and necessary to get the relationship between the gas phase flow rate ratio and the solid composition. By curve fitting to Bi and Tu’s experimental results mathematically, based on Samuelson’s growth model, the nitrogen composition in solid pahse is lower than in gas phase significantly. Therefore, it is not easy to grow high nitrigen composition under the normal gas source MBE growth conditions.