我們製作Al/CeO2(氧化鈰)/p-Si金屬-氧化物-半導體(MOS)結構的電容器來研究其電性。結果顯示在常溫累積區下其漏電流密度在電場1 MV/cm時約為4×10-8 A/cm2，而其介電質強度約為4.6 MV/cm。在溫度範圍350 K至500 K的情況下，實驗結果顯示於適中的電場(~0.5-1.6 MV/cm)下，Al/CeO2/p-Si結構的主要電流傳導機制為蕭基發射；當溫度於450 K到500 K的情況下時，實驗結果顯示於高電場(≧2.36MV/cm)下，此Al/CeO2/p-Si結構的主要電流傳導機制為普爾-法蘭克發射。因此得到金屬鋁(Al)與氧化鈰(CeO2)界面的能障高與在氧化鈰裡的陷阱能階分別為0.76±0.01與1.13±0.01 eV。

The Al/CeO2/p-Si metal-oxide-semiconductor (MOS) capacitors were fabricated to study the electrical proper-ties. The leakage current is about 4×10-8 A/cm2 at 1 MV/cm and the dielectric strength is about 4.6 MV/cm at room temperature in accumulation mode. The dominant conduction mechanisms of the Al/CeO2/p-Si structure are the Schottky emission in a medium electric field (~0.5-1.6 MV/cm) from 350 to 500 K and the Poole-Frenkel emission in a high electric field (≧2.36MV/cm) from 450 to 500 K. The barrier height at the Al/ CeO2 interface and the trap energy level were determined to be about 0.76±0.01 and 1.13±0.01 eV, respectively.