我們以氣相沈積法，在沒有觸媒的輔助下，於550°C成功地將針狀的磊氧化鋅奈米線，垂直地長滿磊晶氮化鎵/藍寶石的基板上。兩階段氧氣導入法是合成成功的關鍵。這些奈米線的長度約3.0μm。奈米線的根部粗約80-100nm，針尖部位則只有15-30nm。由X-ray繞射圖譜顯示，氧化鋅奈米線跟氮化鎵層晶體結構上於垂直方向有[001]ZnO // [001]GaN，和平面方向有[100]ZnO // [100]GaN。這與ZnO/GaN 接面的選區電子繞射的結果一致。以高分辨的穿透式電子顯微觀察結果，也證明氧化鋅奈米線是單晶結構。

Epitaxial needle-like ZnO nanowires were able to grow
vertically over the entire epi-GaN/sapphire substrate at 550°C by
low-pressure vapor phase deposition without employing any metal catalysts.
A two-step oxygen injection process is the key of successful synthesis.
The length of ZnO wires was up to 3.0 μm. The diameters of the roots and
tips of the ZnO nanowires were in the range of around 80-100 nm and 15-30
nm, respectively. The X-ray diffraction techniques showed the epitaxial
orientation relationship between ZnO and GaN as [001]ZnO // [001]GaN along
the normal to the plane, and [100]ZnO // [100]GaN along the in-plane direction.
It is consistent with the selective area electron diffraction pattern (SAED)
taken at the ZnO/GaN heterointerface. High-resolution transmission
electron microscopy confirmed that nanowire was a single crystal.