本篇文章回顧了銅晶圓接合的介面型態，氧化物分佈及微結構觀察。利用我們發展的接合條件可以得到一個良好的銅晶圓接合，此銅晶圓接合形成一均質層，同時原有的接合介面消失不見。銅接合層的氧化物含量分佈是均勻且稀少的，我們並調查在接合及退火過程中，銅接合層中微結構及晶粒取向的變化。我們觀察到銅接合層中微結構在退火後成為穩定態。從接合過程開始，異常的(220)晶粒成長現象被觀察到。銅接合層中的優選晶粒取向由(111)變成(220)。這種優選晶粒取向變化的成因也在本回顧文章中探討。

This review paper reviews the interfacial morphologies, oxide
distribution, and microstructure observation of copper bonded wafers. An
excellent copper wafer bonding can be achieved under the bonding
condition we developed. This wafer bonding shows a homogeneous layer
without the original boding interface. The oxidation distribution in the
bonded layer is uniform and sparse. Different types of interfacial
morphologies were observed as well. Evolution of microstructure
morphologies and grain orientations of Cu-Cu bonded wafers during
bonding and annealing were studied. We observed that the microstructure of
the bonded layer reaches steady state after post-bonding anneal. From the
initial bonding process, an abnormal (220) grain growth was observed. The
preferred grain orientation of the bonded layer became (220) from (111).
This evolution of the preferred grain orientation may come from the
yielding effect and energy minimization of the bonded layer.