在此研究中使用非反應性的Ar電漿離子蝕刻，處理藉由熱化學氣相沉積法在矽基板表面所沈積的多層奈米碳管，並觀察處理過後的奈米碳管表面型態與結構上的改變及其對場發射特性的影響。藉由掃描式電子顯微鏡、能量散佈分析儀、與拉曼頻譜分析的種種量測可以進一步的瞭解Ar電漿反應性離子蝕刻對奈米碳管表面型態、結晶結構、化學組成所造成的改變。實驗結果顯示，使用適當的非反應性Ar電漿來處理，奈米碳管的場發射電流會有明顯增強的現象。這種場發射電流可以歸因於碳管表面型態上的改變，碳管頂端所產生的開口結構，以及在多壁奈米碳管上所產生的大量缺陷狀態。另一方面，過長時間Ar電漿處理則會傷害奈米碳管的表面結構，使奈米碳管場發射電流降低。

We present a simple method to functionalize the surface and to modify the structures of multi-walled carbon nanotube (CNT) grown on silicon substrates using argon (Ar) plasma. The as-grown CNT films prepared by thermal chemical vapor deposition (CVD) were treated with Ar plasma. In this work, scanning electron microscopy (SEM) images were used to visualize the surface morphology and side-wall structure; energy dispersive spectrometer (EDS) was used for the identification and analysis of chemical composition on the surface of CNTs; and Raman spectroscopy was employed to unambiguously determine the structural changes in CNTs caused by plasma treatments. Our results clearly demonstrate that the field-emission characteristics can be enhanced with adequate non-reactive Ar plasma treatment. This field-emission enhancement after plasma treatment can be attributed to the changes in surface morphology, the creation of open-ended structures and the creation of a large number of defects in the CNT films. On the other hand, prolonged Ar plasma treatment can severely damage the surface structure of CNTs, and thus hamper the field emission of CNT films.