本研究利用濺鍍薄膜法在矽基板製程技術成長氧化鋅薄膜，研究中通入摻雜惰性氣體的氮氣，因為它不會和氧化鋅形成反應，若是在高溫中成長反而會去抑制氧原子的流失，若是未通入氮氣氣體所成長出氧化鋅薄膜，氧的缺陷會增加。所以，氧化鋅薄膜經由該技術成長之後，再經由快速熱退火處理，依據文獻資料顯示，將退火溫度設定在400℃退火時，若同時通入氮氣和氧氣氣體，氧氣會補足氧化鋅中氧原子的缺陷，氮氣也將減少氧化鋅薄膜中氧原子的損耗，所以，氧化鋅薄膜退火後的特性比退火前的特性較佳。另外，藉由LCR量測儀的量測，發現氧化鋅薄膜確實能具有良好的濕度感測反應，雖然對於濕度的感測反應並不很明顯，但可以藉由氧化鋅薄膜表面面積的增加，以及製成奈米線或奈米柱，將會使濕度感測器的感測靈敏度提升，本研究也改變氧化鋅薄膜材料成長條件，使氧化鋅濕度感測靈敏度提升。

In this study, we report epitaxial growth of zinc oxide thin films on silicon (111)substrates using silicon oxide buffer layers. ZnO thin films were deposited on silicon substrates using the reactive DC magnetron sputtering in this study. The sputter was used zinc element as target and the oxygen was flowed into chamber to grow ZnO thin film on silicon wafer. ZnO thin film is discussed in the influence of moisture and nitrogen doping ZnO compost. The nitrogen element interfuse into ZnO thin film by sputtering process, it can result the zinc oxide with changes of resistivity and capacitances after Rapid Thermal Annealing (RTA) process. ZnO thin film is added H2O on the thin film surface, it have some different for the measurement of the capacitances and resistances by the LCR Meter. The ZnO epitaxial layers would be successfully in applications of humidity sensor.