在研究的結果發現當共振微波元件動態電阻大於零時，實部阻抗和頻率成反比關係；但當動態負微分電阻小於零時，實部阻抗和頻率形成正比關係。但是當動態負微分電阻大於或小於零時，虛部阻抗和頻率沒有直接的關係。當我們改變元件串聯電感，發現實部阻抗和頻率不會產生直接影響；但會些許的影響到虛部阻抗。當我們改變電容時，元件實部阻抗會隨著電容的增加而增加；虛部阻抗則會因頻率的增加而減少。當電容大於0.06pF時，虛部阻抗會因頻率增加先減少後增加。經由改變共振微波元件等效電路的串聯電阻、串聯電感、動態負微分電阻和電容這些條件，我們可以得到許多的模擬結果，當我們改變動態負微分電阻微分值是實數值時，會有較明顯的變化；電阻微分值為負值時，所產生的結果會與正微分值上下顛倒。但改變的數值為虛數時，微分電阻正負值並不會影響圖形中的阻抗變化。當改變的變數為串聯電感的實數值時，我們可以觀察到不管是正實數值或負實數值，都不會影響阻抗的變化；當改變的阻抗數值為虛數時，會有很細微的變化。改變的變數為電容實數值時，實部阻抗會隨著電容的增加而加；虛部阻抗則是因頻率的增加而減少，當電容大於0.06pF時，虛部阻抗會因頻率增加先減少後增加。

For the resonant tunneling diode, there are problems of circuit meeting certain criteria (i.e., instability or oscillation), when the current-voltage characteristics are associated with obtaining or measuring a stable current-voltage curve in the negative differential resistance region. The well-known models differing from the conventional structures with the quantum well inductance added in each model have been developed. In this research, the model with negative differential resistance of proposed nonlinear element are analyzed. The equivalent circuit parameters of resonant tunneling diodes (RTDs) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. In this paper, the variety of impedance for resonant tunneling structure by changing dynamic resistance, series inductance, and dynamic device capacitance. The high frequency impedance can be successfully produced for the parallel R-C circuit with a series R-L circuit. The impedance- frequency relationship is obtained. Well-defined structures corresponding to the tunneling effect are found. An increase in capacitance after tunneling is found in the impedance- frequency curve, and it is attributed to the charge accumulation at the quasi-bounded state within the quantum well.