抉帶著低成本及既有已量產經驗的優勢，矽薄膜太陽能電池正在太陽能產業中受到相當多的關注。其關鍵技術為藉由電漿的輔助，使得矽薄膜可以在低溫下大面積的沉積。本文針對電漿輔助化學氣相沉積在太陽能產業上的應用作一概略性的介紹。首先，對電漿物理、PECVD設備及製程原理加以闡述。第二部分簡介不同的電漿源及不使用電漿的熱燈絲化學氣相沉積對矽薄膜成長的影響。最後，量產矽薄膜的PECVD設備因為考量不同而有不同設計，本文列舉了三種系統，包括單一腔體、多腔體及捲對捲系統。

Due to the advantages of low cost and proven mass production experience， thin film silicon solar cells have attracted considerable attention in the solar industry. The key technique lies in that， with the assistance of plasma， deposition of large-area thin film silicon can be done at low temperatures. This paper gives an overview of plasma enhanced chemical vapor deposition (PECVD) used in the solar industry. First of all， plasma physics， PECVD equipment and its process principles are explained. The second part briefly introduces the impacts of different plasma sources and hot wire CVD (HWCVD)， in which no plasma involved， on the thin film silicon growth. Finally， if different considerations are taken into account， the design of commercial PECVD systems for thin film silicon solar cells can vary. Here single chamber， multi-chamber and roll-to-roll systems are described.