本研究利用溶劑熱法製備銅銅站(CIS)奈米粉體，後以塗佈方式將CIS漿料塗佈於鍋玻璃基板上形成前驅層，再宜於高溫管狀爐管中進行燒結製程，使之形成具有黃銅礦結構特性薄膜，改變製程參數調整材料本身的粒徑大小和結晶性。由本實驗之結果得到，熱處理溫度500DC、持溫10分鐘，即可得到具有黃銅礦 結構特性之CuInSe2薄膜。

In this research， we used the solvothermal method to synthesize CuInSe2 nano powder. Then deposit thin layers of CuInSe2 inks on sodium glass substrates using simple non-vacuum techniques. Chalcopyrite-type thin film CuInSe2 was successfully prepared by using thermal processing. We had demonstrated it that by controlling and changing the thermal processing temperature， reaction time to control the particle size and crystal phase. We receive a result that thermal treatment of 500 DC/lO min is the best parameter under environment.