將非破壞性缺陷檢測技術應用於矽基太陽電池的缺陷特性偵測，螢光影像技術如同半導體元件之發光二極體特性，外加能量激發太陽電池半導體能階，矽基材料元件會發出近紅外光波長光譜，使用高解析度與高動態範圓的電荷搞合元件，電致發光影像方法可精確判別太陽電池的缺陷特性，以不同電致發光操作方法可分別檢測太陽電池之網印缺陷、電極缺陷、隱裂與破裂缺陷、傳導不良區域等，另外，太陽光電模組的非破壞性缺陷檢測，也可同時檢測大面積與提升檢測速度，因此電致發光缺陷檢測技術是種簡易、高靈敏度與快速的檢測方法，可應用於太陽電池與模組的區域特性識別、製程參數回去貴與產品品質管控。

A comprehensive overview of the non-destructive inspection utilized luminescence imaging is presented for characterizing the defects in the silicon-based solar cell. As a semiconductor device， silicon based device will emit near infrared light the same as a light-emitting diode (LED) by exciting the band gap. The charge coupled device (CCD) camera with high sensitivity and high dynamic range is able to display precisely the defect properties by electroluminescence (EL). In measurement mode contacted to power supply， the radiation emission by the solar cell can be recorded by the CCD camera with different spectrum ranges. In addition， the non-destructive inspection is satisfied for the large area and fast detection demands. The defects in the solar cells， including finger printing， bus bar printing， micro crack defect， broken defect and local efficiency， can be detected in the resolved solar cell characterization， processing parameter feedback and quality control of PV production.