研究利用脈衝電鍍法製備具高雙晶密度之奈米純銅晶粒，再藉由 EBSD (Electron Back
Scattering Diffraction)來做晶體方向性、晶粒尺寸分布之分析。並比較 EBSD、TEM以及 XRD三種分析方法決定晶粒大小之優劣。由 XRD、EBSD 以及 TEM 來決定純銅鍍層的平均晶
粒大小分別為 82.9 nm、1.035 µm和 0.5 ~ 1.0 µm。銅鍍層是由生長雙晶以及具有{220}優
選取向的不規則形狀晶粒所組成，且雙晶晶界佔全部晶界的 37.98%。

In this work copper with high density twins was obtained by pulsed electrodeposition technique. The crystallographic parameters and the grain size of the electrodeposited copper were determined using the electron back scattering diffraction (EBSD) technique and were compared with those obtained from transmission electron microscopy (TEM) and X-ray analyses. The average grain sizes of the as-deposited Cu determined from XRD, EBSD and TEM were 82.9 nm,1.035 µm, and 0.5 µm to 1.0 µm, respectively. There existed a {220} preferred orientation in the
as-deposited Cu and the ratio of twin boundaries to total grain boundaries was 37.98%.