本研究利用新穎之低溫水熱-化學電池法於鍍氮化鋯膜矽晶片上製備鋯酸鋇膜。氮化鋯膜是以中空陰極放電式電漿離子法(HCD-IP)鍍著於矽晶片上，氮化鋯膜之厚度約為 660nm。將鍍氮化鋯膜矽晶片置於 2 M氫氧化鈉與 0.5 M醋酸鋇溶液中，在低於 100 °C的溫度條件下進行鋯酸鋇膜之製備。由 X 光繞射之分析結果顯示，在 70 °C反應 24 小時即可生成立方相鋯酸鋇。由場發射掃描式電子顯微鏡觀察表面與橫截面形貌，發現隨反應時間增加，鋯酸鋇晶粒與厚度有增加趨勢。以 90 °C 反應 8 小時後，所生成鋯酸鋇之膜厚約 0.8 µm，而反應 15 小時後，大部分之氮化鋯膜均已轉變為鋯酸鋇膜，膜厚可達 2 µm。本研究亦對鋯酸鋇膜之成長與反應溫度與時間之關係做探討。

The objective is to prepare barium zirconate (BaZrO3, BZO) films on ZrN-coated Si by a novel low temperature hydrothermal-galvanic couple method. Zirconium nitride films were deposited on Si substrates by hollow cathode discharge plasma ion plating (HCD-IP) and were 660 nm in thickness. ZrN-coated Si specimens were then soaked in Ba(CH3COO)2 and NaOH mixed alkaline solutions with a galvanic couple setup below 100 °C for fabrication of BZO films. X-ray diffraction results show that cubic BZO films were successfully prepared on ZrN/Si at 70 °C for 24 h. The morphology of obtained BZO films was examined by field-emission scanning electron microscopy. Grain size and thickness of BZO films increased with increasing temperature. The thickness of BZO films could reach about 1 µm at 90 °C for 8 h and 2µm for 15 h, indicating that most of ZrN films were converted into BZO films. The film morphology and thickness were dependent significantly on reaction temperatures and times.