本研究以光電化學法在在n-型(100)矽單晶上，採用不具毒性的氟化銨蝕刻液，蝕刻出微米級溝槽結構。陽極極化法及定電位蝕刻可以用來探討氟化銨溶液中，外加電壓與試片圖案間距對蝕刻速率及蝕刻形貌的影響。研究結果顯示：在預蝕刻圖形問距為110?m，若改變蝕刻電位由0.1V增加到0.8V，則蝕刻所得之結構其孔壁厚度由32?m增加至90?m。在外加電位為0.8V時，若改變預蝕刻圖形間距在60~170?m範圍，則間距60、80及110?m試片可以製作出孔壁筆直之溝槽結構，但間距140及170?m試片，蝕刻孔洞發生擴孔，此現象之差異可由電場與空間電荷區分佈之差異來解釋。

Fabrication of macro-trenches on n-type silicon in the ammonium fluoride solution by photo-electrochemical etching has been investigated in this work. Effect of applied voltage and the pitch of pores were discussed in ammonium fluoride solution by dc-potentiodynamic polarization and potentiostatic etching. For the pattern with a pitch of 110?m, the wall width of the etching structures increases from 32?m to 90?m when the etching voltage increases from 0.1 V to 0.8 V. For the etching conducted at 0.8 V, we obtained trenches in vertical walls as the pattern with a pitch less than 110?m (e.g., 60, 80 and 110?m) but in curved walls for the pattern with a pitch higher than 110?m (e.g., 140 and 170?m). This difference in trench morphology is delineated by different distribution for the strength of electric field and the space charge regions.