本文將介紹電漿輔助式分子束磊晶的基本儀器構造與磊晶原理，以及筆者利用國立中山大學之電漿輔助式分子束磊晶系統，所成長之高品質氮化鋁鎵／氮化鎵 (AlGaN/GaN) 異質結構。以及世界上首見以電漿輔助式分子束磊晶，在鋁酸鋰 (LiAlO2) 基板上成長出的氮化鎵微米六角碟與微米六角錐之示範與分析.

In this article, we introduced radio-frequency plasma-assisted molecular beam epitaxy (PA-MBE) and its application in the growth of III-nitride based semiconductors. We also demonstrated the growth of high quality AlGaN/GaN heterostructures and self-assembling GaN hexagonal micro-scaled disk/pyramid by using the radio-frequency plasma-assisted MBE located at National Sun Yat-sen University.