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篇名 透明導電膜(TCO) 之氧化銦錫(ITO) 濺鍍在聚碳酸酯(PC) 基板上之光電特性
卷期 5:2
並列篇名 The Photoelectric Characteristics of the ITO of Transparent Conducting Oxide (TCO) due to Sputter Process on Polycarbonate Substrate
作者 張永鵬雷國昀彭德興康淵
頁次 091-096
關鍵字 高分子聚合物氧化銦錫直流磁控濺鍍PCITODC magnetism spattering
出刊日期 201004

中文摘要

PC (polycarbonate) 為高分子聚合物,不耐高溫製程。因此本文在室溫下使用直流磁控濺鍍方式,將氧化銦錫(indium tin oxide,ITO) 室溫鍍膜在PC基板上,然後分析ITO薄膜附著在PC基板的光電特性,探討PC材料取代玻璃材料之可行性,並且透過實驗設計與分析,找出最佳化的濺鍍條件。由實驗中得知,濺鍍功率為1.5 kw與ITO膜厚為50 nm時,可得到最低的電阻率,其值為6.59×10-4 Ω -cm,光學穿透率在測試波長550 nm下為78.91%。

英文摘要

PC is not able to bear with the high temperature, so the experiment of this paper uses DC magnetism sputtering to carry ITO on the PC substrate under the room temperature. This study analyses the optical characteristics of ITO thin film attached to the PC substrate. Through the analysis of experimental design, the research finds out the optimum condition of sputtering. When the sputter power is 1.5 kw and ITO films size is 50 nm, we were able to obtain lower resistivity with 6.59×10-4 Ω -cm and above 78.91% optical transmittance at 550 nm.

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