我們整合了以電子束技術為基礎的技術能量，並擷取「top down」及「bottom up」兩種研發趨勢的優點，將其應用於材料界面工程領域。從底材表面結構設計製作到界面的形成、觀察及分析等，皆充分地發揮電子束系統高解析度的共同優點，同時也提出新型態的材料界面及其工程研發的架構。應用實例中以鋁／矽界面之研究為例，驗證了電子束技術在半導體的關鍵領域－界面工程與科學的應用潛力，另外，也開闢對金屬／半導體界面機制作進一步認識的另一可能途徑。

An integrated electron-beam technology has been successfully applied on the area of materials interface engineering. And it is based on combing the advantages of "top down" and "bottom up" approaches in the research and development (R/D) of the nano science and technology. In the applications, the common nature with high resolution of the electron-beam systems has been fully utilized in the fabrication and materials investigation of the interface structures. Moreover, a newly developed interface with the patterned structures on the surface of the substrate, unlike the conventionally planar one, and an evolved R/D configuration for the materials interface engineering are proposed. Through a practical example, it is demonstrated that electron-beam technology has a interface. The proposed materials interface structure great potential in the application on the area of the materials can also provide an alternative to improve the metal-semiconductor contact conductance and a possibility to explore the mechanism of the metal-semiconductor interface further.