在次微米或深次微米的製程中，場效電晶體的品質要求是愈來愈嚴格。當新製程開發在試產時或量產線上有製程變動時，閘極的氧化層常有品質控制不佳的現象。因而，造成元件特性曲線有不正常的行為表現，諸如捲縮效應等。如何偵測此現象，並分析元件故障分佈於一晶片或一整批晶片中，實是個棘手的問題。在這裡，我們提出一種藉著二次微分的數值分析電性量測法，以檢測元件的優劣。接著進一步，將此測試流程有效地轉成自動量測系統。一方面，可大量地量測，以判別各種場效電晶體元件良窳；另一方面，可得統計的資料，以利製程改善。縮短製程技術開發時間或加快產品量產速度。

　　　　　In a submicron or deep submicron process era, the integrity of metal-oxide-semiconductor field-effect transistor (MOSFET) is more and more strictly requested. As the generic process development is launched or the mass- production line has some variation, the gate oxide quality under gate electrode is sometimes uncontrolled. Therefore, the device characteristics depict abnormal behaviors such as the kink effect. How to detect this phenomenon and analyze the failure distribution in a wafer or in a wafer lot is a big issue. Here, a method of testing a transistor with second derivative of a numerical method as an electrical prober is proposed. Furthermore, this testing algorithm can be effectively implemented into an auto testing program to probe whether the tested MOSFET transistors have the hump situation. Then, the researchers or the process engineers can utilize this useful information to seek some solutions to overcome that. This test method shows that it is a helpful assistant in monitoring a quality device.