本研究主要探討硫化製程處理銅鋅錫硫化物(Cu2ZnSnS4)薄膜太陽能電池之材料，由於銅鋅錫硫化物(Cu2ZnSnS4)薄膜為p型直接能隙半導體，且具有低成本、無毒性、材料來源充足及其能隙值(~1.5ev)適合於薄膜太陽能電池吸收層之使用等優點，因此非常適合於薄膜太陽能電池之應用。本研究主要的製備方式為溶膠-凝膠法(sol-gel)沉積Cu2ZnSnS4薄膜太陽能電池材料，並針對不同硫化製程條件，分析Cu2ZnSnS4薄膜之結構及其光電特性，探討不同硫化製程對Cu2ZnSnS4薄膜特性之影響，以不同的溫度進行銅鋅錫硫化物Cu2ZnSnS4薄膜的硫化製程後，我們發現Cu2ZnSnS4薄膜隨著硫化處理溫度的提昇而有較好的結晶特性。

In this work, the processes of sulfurization of Cu2ZnSnS4 (CZTS) thin films used for solar cells are investigated. CZTS is a kind of p-type semiconductor with a direct band gap of ~1.5 eV. It is of low cost, non toxic, and abundant, and suitable to be applied for solar cells. The CZTS thin films were prepared by sol-gel deposition. It was treated with sulfurization under different process parameters, and its structure, optical, and electrical properties with respect to sulfurization temperatures are analyzed. It is found that the crystalline properties of the CZTS reveal a readily improvement with increasing the sulfurization temperatures.