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篇名 以共蒸鍍及濺鍍/硒化法發展高效率CIGS 太陽能電池
卷期 32:5=181
並列篇名 High Efficiency CIGS Solar Cell Developed by Coevaporation and Sputtering/Selenization Methods
作者 謝嘉民戴寶通沈昌宏蕭育仁薛丁仁吳宗達
頁次 013-027
出刊日期 201104

中文摘要

銅銦鎵硒 (CIGS) 薄膜太陽能電池具有低成本、重量輕、可撓曲與壽命長等特點,故受到相當的矚目。國家奈米元件實驗室 (NDL) 擁有多腔體濺鍍研發系統及高精準度蒸鍍系統,可以在玻璃基板上成長高品質p-型 CIGS 薄膜。NDL 已建立完整之 CIGS 太陽能電池製程技術,包括以共蒸鍍方式製作之無鎘高效率CIGS 太陽能電池,其轉換效率可達 14%,CIGS 可撓式太陽能電池亦達 6%;而具大面積量產潛力之濺鍍/硒化法無毒 CIGS 太陽能電池轉換效率亦達 6.4%。

英文摘要

Copper indium gallium selenide (CIGS) thin film solar cells attracted a lot of attention due to the low-cost, light weight, flexible, long life and other features and advantages. National Nano Laboratory (NDL) possess G1 size (30 × 40 cm2) continues sputtering system and high precise co-evaporation deposition system that can deposit high-quality p-type CIGS thin film on glass. NDL has established the manufacturing technology of CIGS solar cells, included high-efficiency Cd-free CIGS solar cell with conversion efficiency of 14% and CIGS flexible solar cell with conversion efficiency of 6% both by co-evaporation method, and non-toxic CIGS solar cell with mass production possibility with conversion efficiency of 6.4% by sputtering/selenization methods

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