文章詳目資料
建國科大理工期刊
加入收藏
下載文章
| 篇名 | 製作低溫多晶矽薄膜之非晶矽膜脫氫系統開發 |
|---|---|
| 卷期 | 30:1 |
| 並列篇名 | Development of Dehydrogenation System of Amorphous Silicon Thin Films for the Fabrication of Low-Temperature Polycrystalline Silicon |
| 作者 | 郭啟全 、 張益三 、 陳紀彰 |
| 頁次 | 037-053 |
| 關鍵字 | 低溫多晶矽薄膜 、 非晶矽膜 、 脫氫系統 、 準分子雷射退火 、 low-temperature polycrystalline silicon 、 amorphous silicon 、 dehydrogenation system 、 excimer laser annealing |
| 出刊日期 | 201010 |
中文摘要
本研究運用矽控整流器(Silicon Controlled Rectifier, SCR)、溫控器、熱電偶(thermocouple)與加熱器(heater)，建構出一台脫氫系統，並針對電漿輔助化學氣相沈積非晶矽膜進行脫氫，脫氫後之試片運用傅立葉轉換紅外光光譜儀來觀察試片經過脫氫處理前、後之矽氫鍵結情形。研究結果發現此系統具備優良升溫速度、脫氫效果優良與價格便宜等優點。
英文摘要
A dehydrogenation system comprising of silicon controlled rectifier, temperature controller, thermocouple, and heater is developed in this work. The a-Si thin films prepared by plasma-enhanced chemical vapor deposition are dehydrogenated by this system. After dehydrogenation, the Si-H bond configuration in the samples was examined by Fourier transform infrared. The results obtained reveal that the developed dehydrogenation system owns rapid heating speed, good dehydrogenation quality and inexpensive hardware.