本文主要探討晶圓在電性針測過程中，探針的幾何以及接觸的表面特性對於測試良率的影響。比較各個參數（探針形式、驅動行程及力量、探針的針測角度、銲墊材料以及機台的穩定性）的影響程度，甚至針對某一點參數提出更好的解決方式，並提出對策改善。針測過程的電性傳導，是經由探針卡的探針傳導到晶片內，接觸不良往往是造成整個測試不穩定的主因，探針應力及可靠度和壽命問題嚴重影響晶圓測試成本。由於磨耗及污染，探針之接觸電阻會隨著針測次數而逐漸增加，最後造成探針性能劣化。因而影響探針壽命。

This paper discussed the effects of geometrical property and the contact surface characteristic on the test yield during the electric probe test of the wafer. It compared the influencing degree among various parameters (probe type, drive stroke and force,the angle of the probe in the test, pad material, and equipment stability), and proposed a better solution for a specific parameter and the corrective action for improvement.
The electrical conduction during the probe test is transmitted into the chip through the probing pin of the probe card. Normally poor contact is the main factor leading to the instability of the whole test. The stress, reliability, and service life of the probe greatly affect the costs of the wafer test. The contact resistance of the probe increases gradually with the frequency of the probe test, which can lead to the degradation of the probe performance and thus further influence the service life of the probe.