我們發展了一種新的熱探針法應用來獲得主要載子濃度，一般的熱探針法僅運用於判別半導體
載子的電性，我們發現可以藉由熱探針法量得的電壓配合理論上的簡化獲得摻雜濃度也就是異質半導體的主要載子濃度。

A novel approach to the ‘‘hot probe method’’ is proposed in our work. The conventional hot probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority charged carriers. According to the new Hot Probe technique, one can get the majority carrier concentration.