寄生電容在電子電路中是常見卻難以免除的現象，製作高頻振盪器時，寄生電容又是必需考量的因素之一。散佈在振盪電路各處的寄生電容可能造成振盪器迴路增益小於1 而無法振盪，因此本文提出一個方法，既然寄生電容必定存在於振盪電路之中，那可否改變振盪器電路結構來彌補寄生電容對振盪器所造成的影響，使得振盪器能夠在寄生電容的影響下順利振盪。本文所提出的振盪器與其它振盪器最大的不同點在於本電路具有極點座落於s 域右半平面的二階轉移函數。這個二階轉移函數可彌補電路中寄生電容的影響進而使得振盪電路能夠順利振盪。

Parasitic capacitances in the electronic circuits are often observable, but are difficult to remove it. On the process of making high-frequency oscillators, parasitic capacitances as one of the major factors have to be put into consideration. Parasitic capacitances scattered in oscillator circuits may cause the loop gain of the oscillator at a value smaller than 1, unable to oscillate. In this study, we give a proposal that since
parasitic capacitances always exist in the oscillator circuit, if the structure of the oscillator circuit would change, the impact of parasitic capacitances may be therefore compensated. Consequently, the oscillator, even under the influence of parasitic capacitances, can still oscillate in a smooth way. In this study, the feature of the proposed oscillator distinctive from other oscillators is that the circuit has poles located
at the second-order transfer function in the right half s-plane. The second-order transfer function can make compensation for the impact of the parasitic capacitances in the circuit, enabling the oscillation circuit to oscillate smoothly.