本研究係以電漿輔助化學束磊晶法在氮化鎵 (GaN) 磊晶膜上成長氮化銦 (InN) 磊晶薄膜。透過穿透式電子顯微鏡觀察與分析在成長溫度為 450 °C、500 °C 與 550 °C 時所得之 InN 磊晶薄膜的顯微結構。在 450 °C下所成長之 InN 薄膜，表面粗糙且薄膜並非一個完美的磊晶薄膜。InN 磊晶薄膜在 500 °C 左右時具有最快的成長速率，其薄膜最厚，缺陷密度最高，但薄膜表面相對較為平坦。成長溫度為 550 °C 所得之 InN磊晶薄膜已開始產生空孔，表面平坦度比起 500 °C 之 InN 磊晶薄膜要來得差。在晶體缺陷部分，InN 磊晶薄膜中主要的面缺陷是位移向量為 1/6 <22¯03> 的基面疊差，線缺陷則是布格向量為 b = 1/3 <112¯0> 的差排。

InN epitaxial films were grown on GaN templates by plasma assisted chemical beam epitaxy method. The growth temperatures of InN fi lms were set as 450 °C, 500 °C, and 550 °C. The microstructures of InN fi lms were
characterized by using transmission electron microscopy (TEM). Based on the results of TEM observations, the formation of InN film with the growth temperature of 450 °C consists of slightly tilted grains. The growth rate
of InN fi lm deposited at 500 °C is the fastest among three samples. The surface morphology of InN fi lm is also relatively fl atter under 500 °C. However, InN fi lm grown at 500 °C contains the highest defect density. With the growth temperature of 550 °C, voids appear in InN film. In InN films, the predominant planar defects are basal stacking faults (BSFs) with the displacement vectors of 1/6 <22¯03>. In addition to BSFs, dislocations with Burgers vectors of 1/3 <112¯0> are the major line defects.