本研究主要是以電漿電解氧化法於Ti/Si上製備鈦酸鋇膜，並探討成膜後對抗腐蝕性質之影響。首先將Ti/Si浸置於0.5 M醋酸鋇和2 M氫氧化鈉電解液中，以定電壓模式70 V於70 C進行電漿電解氧化反應3分鐘。由X光繞射分析結果顯示，反應後之生成物為立方相鈦酸鋇。經場發射掃描式電子顯微鏡結果得知，鈦酸鋇膜表面結構為多孔結構；由橫截面圖發現鈦酸鋇膜厚約530  30 nm。於極化腐蝕分析結果發現，反應後之試片與原始Ti/Si之腐蝕電位，分別為0.108 V和0.262V vs. Ag/AgCl，利用電漿電解氧化法於Ti/Si上製備鈦酸鋇膜具有良好的抗腐蝕性。

Barium titanate (BaTiO3) films were synthesized on Ti/Si substrates by plasma electrolytic oxidation (PEO). Corrosion resistance of the obtained BaTiO3 films was also studied. Mixed 0.5 M Ba(CH3COO)2 and 2 M NaOH alkaline solutions were used as the electrolytes. The PEO process was conducted at a potentiostatic mode with an applied voltage of 70 V for 3 minutes at 70 C. X-ray diffraction results showed that cubic BaTiO3 films were successfully grown. Field-emission scanning electron microscopy revealed that the BaTiO3 films possessed uniformly distributed porous morphologies. The thickness of BaTiO3 films was about 530  30 nm. The corrosion potentials of the Ti/Si and BaTiO3/Ti/Si specimens were 0.262 V and 0.108 V vs. Ag/AgCl, respectively. This indicated that the corrosion resistance of the Ti/Si substrate was greatly improved by the deposition of BaTiO3 via plasma electrolytic oxidation.