非晶矽薄膜鍍製於矽晶太陽能電池之表面，具有鈍化功能。鈍化的原理係非晶矽薄膜中的氫原子在適當溫度下往矽晶基板移動，修補矽晶基板表面的斷鍵而形成 Si-H 鍵。除此之外，本質非晶矽薄膜與晶體矽間亦形成等效電場，排阻光生電子往介面移動，而降低在介面之電子電洞複合率。本文探討兩種非晶矽薄膜 (含氫與不含氫非晶矽) 對矽晶太陽能電池特性之影響。與傳統含氫非晶矽的製程機台 PECVD 對照，LPCVD 機台製程不含氫之非晶矽以及多晶矽對矽晶太陽能電池所產生的表面鈍化效果亦可有效提升開路電壓。光學頻譜響應上的短波長及長波長區段也顯示前表面和背表面的表面複合速率減少導致光電流提升。我們一個較早期實驗的結果顯示，使用 LPCVD 在矽晶片兩面鍍製多晶矽薄膜後，太陽能電池效率從 18.1% 提升至 18.4%。

Hydrogenated amorphous silicon (a-Si) is a material that can passivate crystalline silicon (c-Si) solar cells, when
deposited on the surfaces of the cells. The passivation results from the movement of hydrogen atoms residing in the
a-Si toward the a-Si/c-Si interface to fi x dangling bonds at a proper temperature and to form Si-H bonds. Besides,
a fi eld can be built between the a-Si/c-Si interface, repelling photogenerated electrons to combine with holes and
henceforth reducing surface recombination rate. In this article,we present two types of a-Si fi lms (hydrogenated and
non-hydrogenated) that prove to improve the performance of crystalline silicon solar cells. Hydrogenated a-Si can
be grown on the surface of a silicon solar wafer by PECVD, while non-hydrogenated a-Si can be grown by LPCVD,
both improving Voc. One of our earlier experiments revealed that the conversion efficiency of a solar cell with
LPCVD grown a-Si deposited on two-side surfaces of the cell was enhanced from 18.1% to 18.4%.