本研究提出了複合式雷射處理技術（同時具有電極圖案化與雷射退火製程效果），針對銘摻雜氧化鋅（aluminum-doped zinc oxide, AZO）透明導電薄膜材料於一個製程步驟中完成。雷射聚焦光斑直徑為30 μm，而正離焦光束直徑為1 mm，藉由紫外光雷射系統進行調整。AZO透明導電薄膜以濺鍍法沉積於康寧Eagle 2000玻璃基板，厚度約為200 nm。加工後的薄膜表面性質分別藉由原子力顯微鏡（AFM）觀察薄膜表面粗糙度、場發射掃描式電子顯微鏡（FE-SEM）與三維雷射共焦顯微鏡觀察薄膜表面形貌、四點探針量測儀分析薄膜電性和電阻率變化情形，而分光光譜儀量測光穿透率。實驗結果得知，脈衝重複頻率增加其雷射剝蝕深度也隨之增加。當振鏡掃描速度增加時其雷射剝蝕深度隨之降低。雷射退火後在薄膜穿透率光譜略有變化，在可見光光譜範圍內其平均光穿透率約83%。經由雷射電極圖案化與雷射退火製程後，薄膜電阻率明顯下降。在雷射退火後的結構分析中，使用X光繞射光譜（X-ray diffraction, XRD），搭配Scherrer公式計算退火後晶粒大小，得知隨著掃描速度降低，其薄膜晶粒尺寸明顯變大。此外，固定掃描速度為500 mm/s，調整雷射脈衝重複頻率為40 kHz、55 kHz與70 kHz，所得到薄膜表面粗糙度分別為1.1 nm、1.2 nm與1.8 nm。

An ultraviolet (UV) laser system performs simultaneously the electrode patterning and annealing on the aluminum-doped zinc oxide (AZO) films in this study. The diameters of the focused laser beam and the positive defocused laser beam in the system employed were 30 pm and 1 mm, respectively. Both beams were adjusted using a UV laser-processing system. AZO films prepared by the magnetron sputtering technology were deposited on Corning Eagle 2000® optical glass sheets. The thickness of the deposited films was approximately 200 nm. The optoelectronic properties of laser treated AZO films strongly depend on the laser pulse frequency and galvanometer scanning speed. The surface morphology, roughness, optical transmittance, and resistivity of the films after the laser patterning and annealing processes were respectively measured using an atomic force microscope (AFM), a field-emission scanning electron microscope (FE-SEM), a three-dimensional confocal laser scanning microscope, a four-point probe instrument , and a spectrophotometer. Experimental results indicate that the ablation depth increased as the pulse repetition frequency increased and decreased with the galvanometric scanning speed increase. The transmittance spectra of the film changed slightly after the laser annealing, and the average transmittance in the visible region was approximately 83%. All resistivity values after the laser-treated AZO films decreased significantly compared to that of as-sputtered films. The grain sizes of the annealed films were calculated from the X-ray diffraction (XRD) spectra using the Scherrer's equation. The calculated grain sizes increased from 7.4 nm to 12 nm as the annealing scanning speed decreased from 800 mm/s to 400 mm/s. The roughness in the root mean square (RMS) values of annealed AZO films treated with a fixed laser scanning speed of 500 mm/s and with pulse repetition frequencies of 40 kHz, 55 kHz, and 70 kHz were 1.1 nm, 1.2 nm, and 1.8 nm, respectively.