微機械式射頻開關是利用標準互補式金氧半導體(CMOS)製程所製作，其驅動力為靜電力，開關的切換機制是以電容耦合方式進行運作，其構造包含金屬薄膜、訊號傳輸線、彈簧與圓形螺旋電感，電感結構用以提升微機械式開關的電性特性及增加工作頻率範圍。當微機械式開關需要後製程處理釋放懸浮結構，後製程處理採用反應性離子蝕刻 (RIE) 移除電感下方的矽基材以及濕蝕刻犧牲層。實驗結果顯示，微機械式開關的驅動電壓為11V，在工作頻率35GHz時，其插入損失為−0.8dB；隔離度為−25dB。

The RF (radio frequency) switch is fabricated by the standard CMOS (complementary metal oxide semiconductor)process. The switch is capacitive type and actuated by the electrostatic force. The structure of the switch consists ofa suspended metal membrane and a signal transmission line, springs and spiral inductors. The inductors are used toincrease the electrical properties and the operating frequency of the RF switch. The finite element method software,Coventor Ware, is employed to simulate the mechanical properties of the RF switch. The high frequency analysissoftware, ADS (Advanced Design System), is used to simulate the electrical characteristics of the RF switch. Theswitch needs a post-process to release the suspended structures. The post-process uses a RIE (reactive ion etching)to remove the silicon substrate under the inductors, and then the sacrificial layer is etched by a wet etching. Theexperimental results showed that the pull-in voltage of the RF switch was 11 V, and it had an insertion loss of −0.8dB and an isolation of −25 dB at the working frequency of 35 GHz.