為了大量生產液晶顯示面板中的薄膜電晶體液晶顯示器（Thin-film transistor liquid-crystal display, TFT-LCD）陣列和彩色濾光片，必須利用照相平版印刷（photolithography）技術，將光罩上的圖形轉換到液晶顯示面板基材上。因此光罩的精度對液晶顯示面板的品質具有決定性的影響。光罩製程簡單來說，是在石英基板上塗上光阻材料，利用雷射或電子束設備描繪出所需的各種圖形，並且進行顯影的製程，去除掉基板上已曝光的光阻材料，再透過蝕刻的製程，去除掉不被光阻材料覆蓋的鉻膜，最後再清洗殘留下來的光阻材料，最後便會依照鉻膜的線路，讓圖形留在玻璃基板上。面板製造廠，利用此光罩，當做生產液晶面板的母版。與照相原理相同，如同利用底片能夠洗出數千張之照片，利用類似照相的原理，光罩能夠在薄膜電晶體液晶顯示器的基材上產生電子迴路而實現大量生產。如同底片品質的好壞會左右照片的品質般，光罩的品質，亦是左右液晶顯示面板品質的最主要關鍵。目前大尺寸高階光罩主要為GTM（Gray Tone Mask）光罩、HTM（Half Tone Mask）及Slit光罩。高階光罩的趨勢為光罩尺寸越來越大，線寬與間隙的設計越來越細，且整片光罩的均勻度的要求越來越嚴格。光罩製作困難度大增，因此在光罩描繪前的資料轉檔，須藉助特殊的圖形處理，來協助高階光罩的製作，以提高高階光罩的製作良率；而光罩蝕刻製程，其蝕刻速率不一致時，往往造成光罩之線寬均勻度不佳，造成蝕刻速率不均因素很多，如圖形與圖形間之疏密程度，蝕刻機旋轉的速度，蝕刻機噴嘴的位置等。本研究著重在利用圖形補償並改善光罩的關鍵尺寸均勻度及精密度，利用邏輯演算的方法，從整片光罩圖形中找出需要特別做補償之特定圖形做適當的補償，再與原圖形整合，以彌補因圖形疏密不同所造成的蝕刻速率不均而導致的線寬誤差。

To mass-produce the TFT array and the color filter of TFT-LCD panels, the technology of photolithography must be used to transfer photomask graphics onto the base material of LCD panels. Therefore, the precision of the photomask critically affects the quality of TFT-LCD panels. The mask manufacturing procedure begins with application of a photoresistor to quartz blanks, which are subsequently drawn with various geometric shapes by using laser or electron beams. After the developing process is complete, the exposed photoresistor is removed from the blanks and an etching process is applied to eliminate the chrome that was not covered by the photoresistor. Finally, the remaining photoresistor is cleaned, leaving the chrome geometry on the blanks. Alternatively, panel manufacturers use photomasks as master mask to produce LCD panels. Similarly to developing photographs, where a film is used to develop thousands of pictures one photomask can mass produce electronic circuits on a TFT-LCD based material. Just as film quality affects the pictures that are produced, photomask quality has the same effect on the quality of TFT-LCD panels. The primary high-level large-area photomasks that are currently used are gray tone masks（GTMs）, half-tone masks（HTMs）, and slits. The reason for the trend in high-level large-area photomasks is that mask size is becoming larger and the line size and gap design is becoming thinner. In addition, the uniformity requirements for producing photomasks are becoming stricter. Consequently, the difficulties faced in manufacturing photomasks have substantially increased and a particular graphic process is required to assist with improving the yield of photomask production. During the etching process of mask production, a non-uniform etching rate produces an inferior uniformity of the critical dimensions. Reasons for the inferior etching rate results include the uniformity of the photomask pattern, the spin speed of the etching machine, and the nozzle of the etching arms. This research focuses on the photomask pattern line-width compensation for improving uniformity and precision. The research combines logical operations to select the patterns that are necessary for special compensation, adding the appropriate compensation value to the pattern and combining it with the original pattern to generate a complete photomask pattern to compensate for the inferior etching rate that produces an inferior line-width uniformity.