本文介紹表面電位分析於探討影響銅銦鎵硒 (CuIn1xGaxSe2, CIGS) 太陽能電池短路電流 (short-circuitcurrent, Jsc) 因素之應用。針對三階段共蒸鍍 (three-stage co-evaporation process) 成長的銅銦鎵硒薄膜，以掃描電位顯微鏡 (scanning kelvin probe microscopy, SKPM) 取得銅銦鎵硒薄膜的表面電位縱深分布，再搭配 X 光光電子能譜儀 (x-ray photoelectron spectroscopy, XPS) 提供的銅銦鎵硒元素縱深分布輪廓，可藉以分析表面電位變化與銅銦鎵硒薄膜能隙以及內建電場的關係，並進一步探討影響元件短路電流的因素。

This article introduces the applications of surface potential analysis on investigating the factors influencing theshort-circuit current of a CIGS solar cell. For the CIGS thin fi lm grown by a three-stage co-evaporation process, weemployed scanning Kelvin probe microscopy (SKPM) to obtain the depth distribution of the surface potential ofa CIGS thin fi lm. With the elemental depth profi les provided by X-ray photoelectron spectroscopy (XPS), one canstudy the relation between the surface potential variations and the energy gaps as well as the built-in electric fi eld ina CIGS thin fi lm. Furthermore, the factors infl uencing the short-circuit current of a CIGS solar cell can be studied.