本研究是以電漿強化式化學氣相沈積法沈積金屬前介質層硼磷矽玻璃薄膜，透過傅立葉轉換紅外光譜分析、掃描式電子顯微鏡剖面以及表面掃描觀察等手段，探討沉積於乙硼烷（B2H6）和磷化氫（PH3）氣體不同配比條件下之BPSG薄膜特性並分析BPSG薄膜之熱流處理後角度與延遲熱流處理後表面缺陷數量。實驗結果說明，在相同熱流條件下，BPSG中硼磷濃度越高可有效獲得較低熱流處理後角度。但延遲進熱流處理時間越長與硼磷濃度越高將生成更多缺陷於表面。我們擬藉由本研究找出熱流處理後角度與表面缺陷的數量之相關性，以求得BPSG薄膜平坦化之最佳製程條件。

In this study, we used plasma enhanced chemical vapor deposition (PECVD) technique to deposite borophosphosilicate glass (BPSG) as the pre-metal dielectric layer. We analyzed the thermal flow angle and the number of surface defects of BPSG films prepared with different flow ratios of B2H6 and PH3 by using Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) cross-sectional and surface observations. The experimental results show that the samples doped with higher concentration of phosphorus and boron can get a lower thermal angle after the same thermal flow conditions. However, a longer delay time for thermal flow processing, and higher doping concentrations of boron and phosphorus for BPSG film introduce much more defects on the surface. We managed to optimize the planarization process for BPSG by examining the relationship between the thermal flow post-treatment angle and surface defects found on BPSG films.