本研究以電化學沉積法製備CZTSe薄膜，電化學沉積所用的電解液為含硫酸銅、硫酸鋅、氯化錫、亞硒酸之水溶液，基材為鉬片。分別利用X光電子能譜儀、X光繞射儀、拉曼光譜儀、場發射掃描式電子顯微鏡、紫外光-可見光光譜儀研究CZTSe薄膜的化學成分、結晶結構、顯微組織、光學性能等。研究結果顯示當電解液中離子濃度比Cu：Zn：Sn：Se為1：2：10：2時，薄膜不需硒化處理即可得到接近化學計量比的CZTSe薄膜，其光學直接能隙約為1.05 eV。

In this work, one-step electrochemical deposition of Cu2ZnSnSe4 (CZTSe) thin films was reported. The CZTSe thin films were deposited on molybdenum substrate with an aqueous solution containing CuSO4, ZnSO4, SnCl4 and H2SeO3 at room temperature. The composition, crystal structure, morphology and optical properties of the thin films were studied using x-ray photoelectron spectroscopy (XPS), x-ray diffraction technique (XRD), Raman scattering spectrum, field emission scanning electron microscope (FESEM) and UV-Vis spectrometer. The results showed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 1:2:10:2 yielded nearly stoichiometric CZTSe thin film, and the direct band gap of the thin film was about 1.05 eV.