我們採用改良式Hummer 法製備之氧化石墨作為氧化石墨烯 (Graphene Oxide, GO) 之前驅物，以硝酸銀 (AgNO3) 作為奈米銀粒子前驅物，以檸檬 酸鈉做為還原劑合成三種奈米銀氧化石墨烯 (GOAg)，分別命名為GOAg-1、 GOAg-2 與GOAg-3。我們將奈米銀氧化石墨烯添加於P3HT：PCBM 組成的 主動層中來製備高分子太陽能電池，研究奈米銀氧化石墨烯的添加對於高分 子太陽能電池光電特性之影響，我們添加之濃度為P3HT：PCBM：GOAg (重 量比) = 1：1：0.02。本研究之電池結構為ITO/PEDOT：PSS/P3HT：PCBM： GOAg/Ca/Al，我們利用紫外光–可見光吸收光譜儀 (UV-Vis)、掃描探針顯 微鏡 (SPM)、場發射電子顯微鏡 (FE-SEM) 和太陽光模擬光源系統 (J-V)， 來測量吸收度、粗糙度、表面形態和光電性質。由結果得知，添加這三種GOAg 之高分子太陽能電池之短路電流密度 (short-circuit current density, Jsc)、填充 因子 (Fill Factor, FF) 與光電轉換效率 (Power Conversion Efficiency, PCE%) 皆比未添加之電池高，顯示添加這三種GOAg 於主動層皆能有效提高電池之 光電性質。三種GOAg 中以GOAg-2 具最佳提升效果，因為此電池具有最高 的短路電流密度 (short-circuit current density, Jsc) 與光電轉換效率，分別為 9.48 mA/cm2 與3.00%，與未添加之電池比較分別提升了13.5%與40.2%，此 結果可能是由於石墨烯具有高電子遷移率，因此提升了高分子太陽能電池之 光電性質。

Graphene oxide/Ag nanoparticles (GOAg) were fabricated via a modified Hummer method, employing graphite oxide as a precursor of graphene oxide (GO), AgNO3 as a precursor of Ag nanoparticles, and sodium citrate as a reducing and stabilizing agent. We synthesized three kinds of GOAg as GOAg-1, GOAg-2 and GOAg-3. We introduced high electron mobility GOAg into the active layer of polymer solar cell. The cell structure was ITO/PEDOT:PSS/P3HT:PCBM:GOAg/Ca/Al. The weight ratio of P3HT:PCBM:GOAg of the active layer was 1:1:0.02. We studied the effect of GOAg addition on the photovoltaic performance. We used the UV-Vis, SPM, FE-SEM and solar simulator to measure the absorbance, roughness, surface morphology, and power conversion efficiency, respectively. From these results, we found that the short circuit density, fill factor and power conversion efficiency of the cells with GOAg are always higher than those of cell without GOAg. The cells with GOAg-2 has the highest short circuit current density 9.48 mA/cm2, an increase of 13.5%, and the highest power conversion efficiency 3.00%, an increase of 40.2%. These improvements are due to the high carrier mobility of graphene.