本硏究嘗試於含乳酸之硫酸銅鍍浴中，直接以電化學法在純銅陰極板上成長氧化亞銅 (Cu2O)薄膜，鍍浴控制在35、50及65°C等三個溫度爲變數，探討其對生成之薄膜微結構、 光學及光電化學特性之影響。結果顯示：掃描式電子顯微鏡(FE-SEM)觀察所得薄膜形貌， 於35°C低溫下所得薄膜由奈米椎體晶粒所構成，隨著溫度上升至50及65°C，構成薄膜 之錐體晶粒尺寸逐漸增大’經拉曼光譜(Raman spectra)鑑定，三種溫度成長之薄膜均屬於氧 化亞銅，並未出現雜相訊號。由拉曼光譜顯示:在35°C下成長之薄膜，其氧空缺訊號(150 cm-1) 較強，經由電化學進行Mott-Schottky scan確定這些氧化亞銅薄膜均爲p-type半導體，計算 其載子濃度顯示在35。(：成長之薄膜爲4.16 x 1016 cm-3，比65 T成長之氧化亞銅高約10 倍(6.01 x lO^15cm-3)。採用氙燈(強度在100 mW/cm2)，搭配AM L5濾、光片模擬太陽光通過大氣層(吸收紫外線）’照射地球表面以測試光電化學，顯示在35 °C。成長之氧化亞銅薄膜之光電流密度最強(偏壓-0.4 V vs. SCE時爲-0.22 mA/cm2)約爲65°C成薄膜之1.4倍，推測低溫成長之氧化亞銅薄膜晶粒較細，氧空缺較多，導電率與其光電性質較佳。

In this study, we attempted to quantitatively interpret the effect of electrodeposition temperature on Cu2O film's microstracture, optical and photoelectrochemical properties. Thi'ee deposit temperatures (35, 50, and 65 °C) were taken into consideration. Based upon our observations, a general trend was concluded. That is, Cu2O films deposited at lower temperature (35 °C) always possessed a smaller pyramidal-like crystal size, high photolumminance and a higher carrier concentration. These properties made Cu20 films deposited at 35 °C a better photoelectrochemical performance with photocuirent density of -0.22 mA/cm2 (at -0.4 V vs. SCE). This value is about 35% higher than those Cu2O films deposited at higher temperatures. Observed higher photocuiTent density is likely due to the intrinsic of a higher charge carrier concentration analyzed by Mott-Schottky plot.