氮化銦為一直接能隙半導體，其能隙約為 0.7 eV，適合應用於紅外光區之光電元件中，因沿 c 軸生長之 極性 InN 具有較大的自發性極化效應，會降低電子電洞的複合機率，因此可利用半極性或非極性 InN， 增加光電效率。半極性 InN 之研究中，以鋁酸鑭 (LaAlO3，LAO)(112) 單晶做為基板，在不同溫度成長半 極性 InN(10¯13) 薄膜。當半極性 InN 薄膜沉積在 510 °C 時有最佳結晶性，其 (10¯13) 與 (0002) 半高寬分別 約為1408 與 1830 arsec，且會有兩組 180 度對稱之晶域 (Domain)，其磊晶關係為 (10¯13)InN // (112)LAO 與 [1¯210]InN // [11¯1]LAO。另外，LAO 與 InN 之間有極低晶格不匹配率 ([1¯210]InN 方向約為 -7.75%，[¯3032]InN 方向約為 0.2%)，電性方面，半極性 InN 成長溫度於 510 °C 有最高之電子遷移率與最低載子濃度。光學 特性經由 PL 光譜在 10 K 量測結果顯示，NBE 訊號範圍約為 0.72 至 0.81 eV。在 510 °C 所沉積之 InN 在 所有的樣品中有最強的放射訊號與窄的半高寬值。因此，本研究主要在探討半極性 InN 生長於 (112) 鋁酸 鑭 (LaAlO3, LAO) 單晶基板上時所呈現出不同的光電與顯微結構特性。藉由其展現之光電與顯微結構之特 性與行為便瞭解薄膜成長機制，有助於提升 InN-based 磊晶薄膜之品質。

InN material is a direct energy gap semiconductor which is potential for optoelectronics and electronics application. Semipolar InN(10¯13) films were prepared on LaAlO3(112) substrate by varying the substrate temperature. The results show that semipolar InN(10¯13) layers can be grown at 510 °C with the (0002) FWHMs value of 1830 arcsec and (10¯13) XRC FWHMs value of 1408 arcsec. Also, the InN fi lm is in epitaxy with LAO substrate with orientation relationships of InN(10¯13) // LAO(112) and [1¯210]InN // [11¯1]LAO. The lattice mismatch between InN and LAO can then be estimated to be 7.75 % along the [1¯210]InN direction and 0.2 % along the [¯3032]InN direction. Electronic properties showed that the InN film grown at 510 °C exhibits the highest electron mobility of 494 cm2/V-s and lowest carrier concentration of 2.4 X 1019 cm-3. PL spectra at 10 K showed the peaks of near band-edge emission at energies between 0.72－0.81 eV. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of these samples which has better quality.