本文將針對近五年來，新穎過渡性金屬硫屬化合物－二硫化鉬在半導體製程與元件發展近況做一簡單的介 紹。首先就其利用半導體儀器設備技術相容的製備方法及特殊層狀薄膜表面處理方式探討其獨特的原子層 級通道材料特性。然後就其在奈米電子元件應用上對於原子級通道尺寸、低電壓操作及三維堆疊發展方向 進行說明。此半導體 CMOS 製程儀器設備相容的先進二維電子通道材料整合技術將可以為下世代非矽製 程的奈米半導體製程技術帶來一可行的方案。

This paper will describe the novel MoS2 material of transition-metal dichalcogenides, TMD in process and device development at recent fi ve years. In the fi rst, we will introduce its unique 2D layered material properties by CMOS compatible manufacturing technology in semiconductor solid growth method and special monolayer surface treatment process. Then we will discuss its atomic channel scale, low voltage operation and 3D stackable structure in nano electrionic device application. This advanced 2D electronic channel material integration technique in nano semiconductor manufacturing will provide a possible solution for future next non-Si CMOS technology。