原子層沉積技術是現今半導體 IC 製程中非常受到重視與仰賴之奈米超薄膜 (ultra-thin fi lm) 沉積技術，而 隨著 ALD 技術的發展與需求，前驅物材料與製程上的各種臨場 (in-situ) 量測技術也愈顯重要。本文將探 討 ALD 研究上各種臨場量測的特性，並介紹儀器科技研究中心所開發的 ALD 臨場量測技術的應用。

Atomic layer deposition (ALD) is one of the most important technologies in semiconductor IC foundry processes for deposition of nanoscale ultra-thin fi lms. With the development of ALD technology, the in-situ measurements of ALD material and process become more and more important. In this article, we discuss the characterization of ALD in-situ measurement, in addition, we also share the in-situ technologies applied on ALD experiments which are developed by ITRC ALD research team.