由於固態材料內存在著由電子電洞對形成的激子 (exciton)，因此在一個高品質因子的微共振腔當中，光子 可以和主動層內的激子進行強耦合而產生能態分裂，並形成一種半光半物質的準粒子稱為激子－極化子 (exciton-polariton)，亦簡稱為極化子 (polariton)。極化子具有玻色子的特性，當大量凝聚於最低能態時將 形成玻色愛因斯坦凝聚並釋放出如同雷射的同調光。近年來，半導體微共振腔 (semiconductor microcavity) 被視為一種極具潛力的固態光子元件，透過設計不同的主動層結構以及材料，半導體微共振腔被認為可應 用於垂直共振腔面射型雷射 (VCSEL)、單光子光源以及其他光電子元件中(1-6)。本篇除了簡介半導體微共 振腔極化子雷射的發展之外，同時說明分析與量測極化子雷射所需的儀器與技術。

In a high quality factor microcavity, photons can strongly couple with the excitons, formed by electrons and holes by Coulomb interaction in solid materials, to generate a new kind of quasi-particle, called exciton-polariton or polariton, with half-matter and half-light characteristics. Polariton is a kind of Boson, which is able to form Bose- Einstein condensation through stimulated scattering of polaritons at the ground state and to emit coherent photons when polaritons escape from the cavity. Recently, semiconductor microcavities have been considered as a promising solid light sources because they can potentially be applied in vertical-cavity surface emitting lasers, single photon sources and other optoelectronic devices(1-6). In this report, we not only give an introduction to semiconductor microcavity polariton lasers, but also introduce the technology we need to characterize the polariton lasers.