以氮化銦為基底之高銦含量氮化物在紅外光區之高效率光電元件中是相當有潛力的材料，主要是氮化銦 在近年來被量測出具有高載子遷移率 (~3500 cm2/V-s) 與約 0.65 eV 之能隙，若是摻雜鋁或鎵元素，則可 調整其光學能隙落於 0.65－6.2 eV 之間，是相當有潛力的光電材料。然而，由於 InN 之熱裂解溫度較低 (< 600 °C) 且無適合之基板，因此較難製備出高品質之 InN-based 薄膜，因此，InN-based 薄膜之光電特性 一直無法被確認。本研究中利用金屬有機分子束磊晶系統直接沉積高銦含量氮化鋁銦薄膜於矽 (111) 基板 上，實驗中固定 V/III 流量比、電將功率等因素僅改變基板溫度在 460－540 °C 範圍內，再透過 X 光繞射 分析儀、掃描式電子顯微鏡與穿透式電子顯微鏡等分析設備進行結構分析與探討。由各項結果指出，Inrich InAlN 薄膜在 460 °C 基板溫度有較佳之結晶品質，並且從 TEM 結果顯示 In-InAlN 薄膜可磊晶成長於 Si(111) 基板上，其磊晶關係為 (0002)InAlN // (111)Si、[−2 110]InAlN // [1−1 0]Si 與 [01−1 0]InAlN // [−1 −1 2]Si。

InN-based materials are a potential material for various devices such as infrared light emitters and high effi ciency optoelectronic device because of it is high mobility and narrow band gap of 0.6-0.8 eV. However, the InN is diffi cult to grow high-crystalline-quality InN owing to its low dissociation temperature and the lack of lattice-matched substrates. In-rich InAlN fi lms were grown directly on Si(111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460-540 °C with TMIn/TMAl ~ 3.3. Structural properties of InAlN ternary alloys were investigated with x-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM). The XRD results indicated that In-rich InAlN fi lms grown with the 460 °C has the smallest full width at half maximum value of 108 arcmin for (0002) X-ray rocking curve (XRC). Also, ross-sectional TEM from InAlN grown on Si(111) at 460 °C shows that the epitaxial fi lm is in direct contact with orientation relationship of InAlN (0002)InAlN // (111)Si、[−2 110]InAlN // [1−1 0]Si 與 [01−1 0]InAlN // [−1 −1 2]Si.