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光連 : 光電產業及技術情報

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篇名 化合物半導體產業動向
卷期 139
頁次 025-026
關鍵字 砷化鎵氮化鎵銦磷化物
出刊日期 201901

中文摘要

化合物半導體用於光電元件分別有以下四種材料:砷化鎵(GaAs)、氮化鎵(GaN)、銦磷化物(InP)與藍寶石。其中砷化鎵(GaAs)應用於雷射二極體與LED,近期最受矚目的應用是面射型雷射(VCSEL)呈現蓬勃的狀況,預估保持去年的水準;目前氮化鎵(GaN)的應用僅限於雷射二極體與LED,並無顯著的市場成長性。未來與GaN相關的電子裝置之技術規格發展是掌握市場拓展的關鍵。至於銦磷化物(InP)的市場成長,則寄望除了期望對光收發器的新需求以改善5G的通信網路之外,預計對資料中心流量有關的設備元件需求也會有挹注。

英文摘要

There are mainly four compound semiconductor materials applied to the photonics field, namely: gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), and sapphire. Among them, gallium arsenide (GaAs) is applied to laser diodes and LEDs. The most attractive application in the near future is the surface-emitting laser (VCSEL), which is expected to maintain the level of last year. Currently, gallium nitride (GaN) The application is limited to laser diodes and LEDs, and there is no significant market growth. The development of technical specifications for future GaN-related electronic devices is the key to market expansion

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