在本文中我們介紹了一種新的電漿材料氮化鈦。氮化鈦具有優異的耐火性能和化學穩定性以及超過 2000 °C 的高熔融溫度。作為電漿材料氮化鈦已應用於光學奈米天線、能量收集設備、數據存儲、表面增強拉曼散射和生物光子學。氮化鈦的載子濃度和遷移率足夠高，以產生負的實數項介電常數和低的材料損耗。我們在濺鍍系統中使用斜向沉積生長氮化鈦奈米柱陣列。氮化鈦的介電常數可以通過改變沉積條件進行調整，包括氬氣／氮氣 (Ar / N2) 流量比和基板偏壓。我們研究顯示氮化鈦奈米柱陣列的局域電漿共振可藉調整沉積條件而加以調控。

In this article, we introduce a new plasmonic material, TiN. TiN owns excellent refractory properties, chemically stability and high melting temperatures of over 2000 °C. As a plasmonic material, TiN has been applied in optical nanoantennas, energy harvesting devices, data storage, surface-enhanced Raman scattering, and biophotonics. The carrier concentration and mobility of TiN are sufficiently high to generate negative real permittivity and low material loss. Our work used glancing angle deposition to grow TiN nanorod arrays in a sputtering system. The permittivity of TiN can be tuned by varying deposition conditions including argon/nitrogen (Ar/N2) flow ratios and substrate bias. We show that the localized plasmonic resonance of a TiN nanorod array is varied with deposition condition.