本研究擬引進電漿理論與技術，開發封閉式磁控濺鍍系統，改進反應濺鍍的化合能力、製程電漿的穩定性及鍍膜速率，之後導入高功率脈衝電漿源技術來增加成膜能量及提高薄膜製密性，接著應用此新型濺鍍技術鍍製氮化矽及氮氧化矽，最後設計並鍍製光學硬膜，此系統可鍍出中紅外光 3200－4800 nm 的平均穿透率為 99.0% 的光學薄膜，在深紫外波段可鍍出波長 248 nm 穿透率 99.2% 的光學薄膜，而在可見光可鍍出平均穿透率 96%，硬度 21 GPa的光學硬膜。

In this research, the plasma technique has been implemented to develop the closed field magnetron sputtering to improve the ability of sputtering reaction, the stability of the plasma and deposition rate. Then high power impulse magnetron sputtering is applied to increase the deposition energy and packing density. Next, Si3N4 and SiOxNy films are deposited with the novel deposition technique and the transparent hard coating is designed and manufactured. A 3-layer of AR coating in the DUV range is designed and fabricated on double side quartz and a high transmittance of 99.22% is attained at 244 nm. A four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200－4800 nm is 99.0% and the highest transmittance is 99.97 % around 4200 nm. A film structure of 6-layer transparent hard coating/glass/4-layer AR coating is designed and deposited. Its average transmittance is 96.0% in the visible range while its hardness is 21 GPa .