氮化銦在近年來被量測出具有高載子遷移率 (~3500 cm2/V•s) 與約 0.65 eV 之能隙，若是摻雜鋁或鎵元素，則可調整其波長落於 0.65－6.2 eV 之間，因此氮化銦在紅外光區之高效率光電元件中是相當有潛力的材料。然而，由於 InN 熱裂解溫度較低 (< 600 °C) 且無適合之基板，因此較難製備出高品質之 InN 薄膜，本研究透過電漿製程對 Si 基板表面進行氮化後，再以電漿輔助金屬有機分子束磊晶系統在不同基板溫度下進行 InN 成長，最後利用先進之分析技術探討氮化 Si3N4 與 InN/氮化 Si3N4 的微結構、界面探討其物理與化學特性。由實驗結果顯示，當 Si3N4 氮化條件 N2 於 1.2 sccm、氮化時間為 60 min 時，可得到均勻且部分連續之結晶態 Si3N4 薄膜，其厚度約為 5 nm；XRD 與 TEM 結果顯示，520 °C 所成長之 InN具有相對較佳的結晶品質，並且確認晶體是沿著 [0001] 方向堆疊成長的六方纖鋅礦結構，由 SEM 觀察表面形貌發現，InN 呈現六方尖錐狀的奈米柱結構並且部分晶柱成長時與基板方向產生偏差；同時透過 XPS 量測結果亦表明此為接近化學劑量比之 InN/ Si3N4。

InN is a potential material for various devices such as infrared light emitters and high efficiency optoelectronic device because of it is high mobility (~3500 cm2/v•s) and narrow band gap of 0.65－0.7 eV. Also, Al, Ga-doped InN alloys has band gap of wide range in the 0.65－6.2 eV. However, the InN is difficult to grow high-crystalline-quality InN owing to its low dissociation temperature and the lack of lattice-matched substrates. Therefore, the various properties of InN films have not been fully confirmed. In the study, the SixNy thin films was grown on surface of Si substrate for nitridation by RF-N2 plasma exposure. And then the InN nanocolumns were prepared on nitrided SixNy/Si(111) via radio-frequency (RF) metal-organic molecular beam epitaxy (MOMBE) with various substrate temperatures. We discussed the effect of various condition on the chemical and structural properties of SixNy ultra-thin film and InN nanocolumns. The surface and interface chemical composition and surface morphology are investigated by using transmission electron microscope (TEM), ellipsometer, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). TEM image indicated that the SixNy film shows relatively surface of smooth with 1 sccm N2 and 300 W of RF power. Based on X-ray diffraction analysis, highly <0001> -oriented hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. SEM images show that the deviation angle of InN nanocolums was measured to evaluate the alignment of arrays. Also, the XPS results indicated that the InN/SixNy were measured at nearly chemical stoichiometric.