The differences on the material properties of silicon carbide (SiC) and silicon (Si) are compared in this paper. The electrical characteristics of MOSFET based on SiC and Si are also analyzed, and the switch trajectory is obtained by the simulation. A model is proposed in this paper to analyze the influence of drive resistance during the switching process. Then, the drive circuits suitable for typical circuits such as single-switch power circuit, bridge power circuit and dual-switch forward circuit adopting SiC MOSFET are obtained. In addition, the crosstalk problem in the bridge circuit is also analyzed and four improved auxiliary circuits are provided. Their advantages and disadvantages are compared by simulation. Some key tips about the layout design of the SiC MOSFET drive circuit are also proposed.