近年來隨著快速充電、無人機、電動車、5G行動通訊等新興應用的出現，市場上渴望下一代功率元件以及高頻功率放大器能有更低的消耗功率、更大的功率密度、更快的操作頻率和更高的可靠度。因此尋找新的半導體功率元件材料成為各界一致共同努力的方向，在這些新興材料當中，氮化鎵(GaN)當屬最受到矚目的材料之一。

In recent years, with the emergence of emerging applications such as fast charging, drones, electric vehicles, and 5G mobile communications, the market is eager for the next generation of power components and high-frequency power amplifiers to provide lower power consumption, greater power density, and faster operating frequency and higher reliability. Therefore, finding new semiconductor power device materials has become the direction of concerted efforts for semiconductor companies. Among these emerging materials, gallium nitride (GaN) is one of the most noticeable materials.