本文簡介碳化矽功率半導體材料的技術發展過程、材料特性以及數種與碳化矽半導體有關之元件基本原理，並介紹未來可應用的產品和領域。由於碳化矽元件具有高崩潰電壓、高導熱率以及可高溫、高頻操作的特性，未來將成為繼藍寶石之後，下一代的新興半導體材料。

This article introduced the processes of technological development, material characteristics and basic principles of silicon carbide (SiC). Meanwhile, the applicable products and fields in the future were introduced, either. Because silicon carbide components have the characteristics of high breakdown voltage, high thermal conductivity, high temperature and high frequency operation, they will become the next generation of emerging semiconductor materials after sapphire in the future.