本文將簡介應用於WiMAX與未來高階無線通訊系統之射頻前端單晶片，完成整合瓦特級高線性度射頻功率放大器、射頻天線開關與低雜訊放大器於單一晶片上。整合高功率元件於極小面積相伴之強力電磁干擾與熱衰竭問題已獲解決，實現了現行模組之縮小化並同時達到高線性度、高效率操作。本晶片使用砷化鎵異質接面電晶體與假型高電子移動率電晶體整合製程。完成之示範單晶片封裝模組具有IEEE 802.16e 64QAM調變下24.5dBm線性輸出功率，整體功率轉換效率達到16%以上。此晶片之應用場合主要為行動電話， 亦可用於其他具射頻收發功能之行動電子裝置。

This article discusses a single-chip RF front-end solution in WiMAX and future advanced wireless communication system. The chip includes high linearity RF power amplifier, antenna switch and low noise amplifier. It delivers more than 1 W RF power with excellent linearity on small die area. Electromagnetic interference and thermal breakdown issues are solved. The chip uses integrated GaAs HBT and p-HEMT process. The packaged chip has 24.5dBm linear power with IEEE 802.16e 64QAM signal. The power-added efficiency is more than 16%. Its major applications are for mobile phones and radio handset devices.