電阻式非揮發性八電晶體靜態隨機存取記憶體已經被提出用以減輕靜態功率、電源關閉時保 留資料，且提供快速開機的速度。在本文中，我們定義數個針對非揮發性八電晶體靜態隨機存取 記憶體的錯誤模型化，其中包含新的憶阻器相關錯誤模型。另外提出了一類行軍式測試演算法可 涵蓋簡單的靜態隨機存取記憶體的錯誤與憶阻器相關的錯誤。在16kb之待測記憶體下，所提出的 類行軍式測試演算法與現有的方法相比雖然需要25.9%的額外測試時間， 但在這些探討的錯誤模 型下可提供100%的測試涵蓋率。另外， 我們亦提出類行軍式診斷測試， 以區分非揮發性八電晶 體靜態隨機存取記憶體中憶阻器相關的錯誤。

Resistive nonvolatile-8T (Rnv8T) static random access memory (SRAM) has been proposed to alleviate static power and preserve data in power -down mode and provide fast power-on speed. In this paper, we define several faults for the Rnv8T SRAM including new memristor-related fault models. Also, a March-like test algorithm which can cover simple SRAM faults and defined memristor-related faults are proposed. Considering 16kb memory under test, the proposed March-like test needs 25.9% test time overhead as compare with existing test algorithm, but provides 100% fault coverage on the targeted faults. Furthermore, we also propose a March -like diagnosis test for distinguishing memristor-related faults of Rnv8T SRAMs.