我們研究經二氧化碳雷射退火之富矽氧化矽膜的光學特性，包含不正常吸收與相對應的能帶變化。在研究埋藏有奈米矽晶的二氧化碳雷射快速退火富矽氧化矽膜之微米級光激螢光與微米級光反射分析時，筆者提出了含有奈米矽晶之富矽氧化矽膜之區域性二氧化碳雷射退火的去氫／蝕刻化現象與其光學特性。也發展形成矽奈米錐於二氧化矽與矽基板界面，用以增強富矽氧化矽之電激螢光。這個含有界面型矽奈米錐之奈米矽基發光二極體的增強型Fowler-Nordheim 穿隧效應也被成功的提出。為了改善並分析奈米矽基發光二極體的內部與外部量子效率，我們發展以快速自聚集鎳奈米點製作於蓋有低黏滯性與熱聚集二氧化矽膜的矽基板上，並利用此自聚集鎳奈米點遮罩與乾式蝕刻矽基板，形成高深寬比矽奈米柱，分析其異常微米級光激螢光現象，與低折射係數之矽奈米柱於矽基板上。我們也藉由電容－電壓量測，觀察不同電漿功率下奈米矽造成的電荷儲存效應。

We demonstrate the dehydrogenation/ablation and optical refinement properties of a localized CO2-laser rapid-thermal-annealed or ablated Si-rich SiOx film with buried Si nanocrystals. The synthesis of Si nanopyramids at SiOx/Si interface for enhancing electroluminescence of Si-rich SiOx is reported, which assists enhancing Fowler-Nordheim tunneling effect and internal/external quantum efficiencies in such adevice with interfacial Si nano-pyramids or nano-pillar array is premier. We demonstrate a rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers to be an etching mask for the formation of Si nano-pillars on Si substrate. Anomalous micro-photoluminescence and low refractive index of the high-aspect-ratio Si nano-pillars are determined. Up to now, the carrier injection is still a problem to further improve the light emission, however, we characterize the memory effect of Si nanocrystals by capacitancevoltage analysis to realize its charging effect and carrier escaping rate.