在本文中我們利用熱氧化絕緣層上覆矽鍺結構來形成鍺量子點(小至3 nm 且密度高達2.8 ¥1012 cm–2)，並且詳細地探討氧化條件、矽鍺合金中鍺含量、薄膜厚度，以及幾何形狀對於鍺量子點特性的影響，如尺寸大小、分布密度、位置以及成長機制等。從陰極光激發的吸收光譜可知，鍺量子點／二氧化矽系統在波長400－550 nm 之間，隨著量子點的縮小有明顯的藍移現象。我們利用此法成功地在可見光至近紫外光有極強光響應的鍺量子點層金屬－氧化物－半導體二極體。在405 nm 光源照射下，鍺量子點層金屬－氧化物－半導體二極體展現明顯的光電流放大特性，其光響應度高達812 mA/W，而所對應的量子效率為245%。

Using thermal oxidation of SiGe-on-insulator structures for forming Ge quantum dots (QDs) embedded in a SiO2 matrix, we have systematically investigated possible structure factors that would affect the properties of Ge QDs such as size, density, and even the position. Cathodeluminescence spectra reveal significant light emission at 400－600 nm from the Ge-QDs/SiO2 system as the QD size is scaled from 9 nm to 3 nm. This finding strongly motivates the exploration of Ge-QDs/SiO2 metal-oxide-semiconductor (MOS) photodiodes (PDs) for visible to near ultraviolet photodetection. MOS PDs with Ge QDs have high rectifying ratio (~105) in darkness and a high photocurrent/dark-current ratio (~103). Increasing the number of Ge-QD layers from zero, through one to three improves the photoresponsivity from 4.64, through 482 to 812 mA/W corresponding to quantum efficiencies of 1.42, 148, and 245%, respectively.